Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit
نویسندگان
چکیده
منابع مشابه
Modeling of Single-Event Effects in Circuit-Hardened High-Speed SiGe HBT Logic
This paper presents single-event effect (SEE) modeling results of circuit-hardened SiGe heterojunction bipolar transistor logic circuits. A simple equivalent circuit is proposed to model the ion-induced currents at all of the terminals, including the p-type substrate. The SEE sensitivity of a D-flip-flop was simulated using the proposed equivalent circuit. The simulation results are qualitative...
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ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2011
ISSN: 0018-9499,1558-1578
DOI: 10.1109/tns.2011.2107333